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| SUM18N25-165 New Product Vishay Siliconix N-Channel 250-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) 0.165 @ VGS = 10 V ID (A) 18 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive Such As: - Diesel Fuel Injection - High-Side Switch - Motor Drives D TO-263 G G DS S Top View Ordering Information: SUM18N25-165--E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 250 "20 18 10.4 20 5 1.25 150b 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72849 S-40467--Rev. A, 15-Mar-04 www.vishay.com PCB Mount (TO-263)c Symbol RthJA RthJC Limit 40 1.0 Unit _C/W 1 SUM18N25-165 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 250 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 250 V, VGS = 0 V, TJ = 125_C VDS = 250 V, VGS = 0 V, TJ = 175_C VDS w 15 V, VGS = 10 V VGS = 10 V, ID = 14 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = 10 V, ID = 14 A, TJ = 125_C VGS = 10 V, ID = 14 A, TJ = 175_C VDS = 15 V, ID = 18 A 36 20 0.130 0.165 0.347 0.462 S W 250 2.5 4 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 125 V, RL = 7.0 W ID ^ 18 A, VGEN = 10 V, Rg = 2.5 W VDS = 125 V, VGS = 10 V, ID = 18 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 1950 160 70 30 10 10 1.6 15 130 30 100 25 195 45 150 ns W 45 nC pF Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 18 A, di/dt = 100 A/ms IF = 18 A, VGS = 0 V 1.0 115 10 0.58 18 20 1.5 175 15 1.3 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72849 S-40467--Rev. A, 15-Mar-04 SUM18N25-165 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 6 V 5V I D - Drain Current (A) 20 Vishay Siliconix Transfer Characteristics 16 I D - Drain Current (A) 16 12 12 8 8 TC = 125_C 4 25_C -55_C 0 4 4V 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance 60 TC = -55_C 50 g fs - Transconductance (S) 40 30 20 10 0 0 4 8 12 16 20 25_C 125_C r DS(on)- On-Resistance ( W ) 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0.00 0 On-Resistance vs. Drain Current VGS = 10 V 4 8 12 16 20 ID - Drain Current (A) 2800 ID - Drain Current (A) 20 VDS = 125 V ID = 17 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2100 16 Ciss 12 1400 8 700 Crss Coss 0 0 40 80 120 160 200 VDS - Drain-to-Source Voltage (V) 4 0 0 8 16 24 32 40 48 56 Qg - Total Gate Charge (nC) Document Number: 72849 S-40467--Rev. A, 15-Mar-04 www.vishay.com 3 SUM18N25-165 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.8 2.4 rDS(on) - On-Resiistance (Normalized) 2.0 1.6 1.2 0.8 0.4 -50 VGS = 10 V ID = 18 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) 100 Avalanche Current vs. Time 325 Drain Source Breakdown vs. Junction Temperature 10 I Dav (a) 310 ID = 10 mA IAV (A) @ TA = 25_C 1 V(BR)DSS (V) 295 280 0.1 IAV (A) @ TA = 150_C 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 tin (Sec) 265 250 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72849 S-40467--Rev. A, 15-Mar-04 SUM18N25-165 New Product THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area Vishay Siliconix 20 100 16 I D - Drain Current (A) I D - Drain Current (A) 10 Limited by rDS(on) 10 ms 100 ms 12 8 1 TC = 25_C Single Pulse 1 ms 10 ms 100 ms, dc 4 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse Normalized Thermal Transient Impedance, Junction-to-Case 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72849 S-40467--Rev. A, 15-Mar-04 www.vishay.com 5 |
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